at 90% efficiency using deep-trench capacitors in 32nm SOI CMOS.
Toke Meyer AndersenFlorian KrismerJohann W. KolarThomas ToiflChristian MenolfiLukas KullThomas MorfMarcel A. KosselMatthias BraendliPeter BuchmannPier Andrea FrancesePublished in: ISSCC (2014)