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Independent Gate SRAM Based on Asymmetric Gate to Source/Drain Overlap-Underlap Device FinFET.

Naveen KaushikBrajesh Kumar KaushikDavinder KaurManoj Kumar Majumder
Published in: VDAT (2012)
Keyphrases
  • field effect transistors
  • leakage current
  • cmos technology
  • power consumption
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