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Metal/BaTiO3/β-Ga2O3 Dielectric Heterojunction Diode with 5.6 MV/cm Breakdown Field.
Zhanbo Xia
Caivu Wang
Hareesh Chandrasekar
Wyatt Moore
Aidan Lee
Nidhin Kurian Kalarickal
Fengyuan Yang
Siddharth Rajan
Published in:
DRC (2019)
Keyphrases
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genetic algorithm ga
schottky barrier
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transmission line
neural network
chemical vapor deposition
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multi objective
fuzzy logic
field effect transistors
hybrid ga