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300-V class power n-channel LDMOS transistor implemented in 0.18-μm silicon-on-insulator (SOI) technology.
Shuai Zhang
Hsiao-Chin Tuan
Xiaojing Wu
Lei Shi
Jian Wu
Published in:
Microelectron. Reliab. (2016)
Keyphrases
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silicon on insulator
ibm power processor
cmos technology
low power
error resilience
high speed
integrated circuit
power dissipation
general purpose
power consumption
video streaming
channel coding
metal oxide semiconductor
dynamic random access memory