Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges.
Erlend G. RolsethAndreas BlechInga A. FischerYoussef HashadRoman KoernerKonrad KosteckiAleksei KruglovV. S. Senthil SrinivasanMathias WeiserTorsten WendavKurt BuschJörg SchulzePublished in: MIPRO (2017)