A silicon photomultiplier with >30% detection efficiency from 450-750nm and 11.6μm pitch NMOS-only pixel with 21.6% fill factor in 130nm CMOS.
Eric A. G. WebsterRichard J. WalkerRobert K. HendersonLindsay GrantPublished in: ESSDERC (2012)
Keyphrases
- silicon on insulator
- cmos technology
- metal oxide semiconductor
- transmission electron microscopy
- low cost
- image sensor
- low power
- high speed
- x ray
- integrated circuit
- power consumption
- detection rate
- automatic detection
- detection method
- nm technology
- false alarms
- object detection
- low voltage
- computational complexity
- real time
- parallel processing
- focal plane
- power dissipation
- ibm power processor
- anomaly detection