A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications.
Jonathan ChangYen-Huei ChenGary ChanKuo-Cheng LinPo-Sheng WangYangsyu LinSevic ChenPeijiun LinChing-Wei WuChih-Yu LinYi-Hsin NienHidehiro FujiwaraAtul KatochRobin LeeHung-Jen LiaoJhon-Jhy LiawShien-Yang Michael WuQuincy LiPublished in: VLSI Technology and Circuits (2023)
Keyphrases
- high density
- cmos technology
- nm technology
- embedded dram
- random access memory
- power consumption
- low density
- data center
- low power
- magnetic recording
- high power
- image sensor
- design considerations
- close proximity
- dynamic random access memory
- real time
- power management
- low voltage
- high bandwidth
- data transmission
- thin film
- magnetic tape
- silicon on insulator
- power dissipation
- parallel architecture
- wireless communication
- high speed
- low cost