Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms.
Yu-Chien ChiuChun-Yen ChangHsiao-Hsuan HsuChun-Hu ChengMin-Hung LeePublished in: IRPS (2015)
Keyphrases
- memory capacity
- random access
- secondary storage
- high speed
- memory storage
- main memory
- resource consumption
- disk storage
- computing power
- disk access
- storage devices
- limited memory
- storage media
- memory management
- storage capacity
- memory space
- data transfer
- memory usage
- storage requirements
- data storage
- low power
- memory requirements
- low cost
- external memory
- storage and retrieval
- power dissipation
- hybrid learning
- short term memory
- mechanical properties
- integrated circuit
- atomic force microscopy