A 11-Transistor Nanoscale CMOS Memory Cell for Hardening to Soft Errors.
Sheng LinYong-Bin KimFabrizio LombardiPublished in: IEEE Trans. Very Large Scale Integr. Syst. (2011)
Keyphrases
- high speed
- power dissipation
- low power
- power consumption
- circuit design
- low cost
- random access memory
- cmos technology
- metal oxide semiconductor
- vlsi circuits
- real time
- integrated circuit
- main memory
- memory usage
- memory requirements
- focal plane
- computing power
- error analysis
- atomic force microscopy
- image sensor
- low voltage
- stem cell
- nm technology
- analog to digital converter