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Fabrication and Characterization of a Fully Si Compatible Forming-Free GeOxResistive Switching Random-Access Memory.

Jae Yoon LeeYoungmin KimIkhyeon KwornIl Hwan ChoJae Yeon LeeSoo Gil KimSeongjae Cho
Published in: DRC (2018)
Keyphrases
  • random access memory
  • design considerations
  • low voltage
  • high speed
  • integrated circuit
  • high density
  • memory access
  • database
  • response time
  • signal processing
  • computer systems
  • flash memory