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Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate.

Xiao WangZhi-Yu LinYuan-Hang SunLong YueYu-Min ZhangJian-Feng WangKe Xu
Published in: Sci. China Inf. Sci. (2024)
Keyphrases
  • structuring elements
  • finite element
  • user interface
  • leakage current
  • digital images
  • gray scale
  • cost effective