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Fabrication of 3.1kV/10A 4H-SiC Junction Barrier Schottky Diodes.
Chengsen Wang
Hao Yuan
Qingwen Song
XiaoYan Tang
Renxu Jia
Yuming Zhang
Yimen Zhang
Yidong Shen
Published in:
ASICON (2015)
Keyphrases
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high density
electron beam
semiconductor devices
transmission line
magnetic recording
data center
neural network
reactive power
real world
x ray
computational intelligence
thin film
multiresolution
image sequences
three dimensional
clustering algorithm
image processing