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Cycling Induced Trap Generation and Recovery Near the Top Select Gate Transistor in 3D NAND.

Xingqi ZouLiang YanLei JinDa LiFeng XuDi AiAn ZhangHongtao LiuMing WangWei LiYali SongHuazheng WeiYi ChenChunlong LiZongliang Huo
Published in: IRPS (2019)
Keyphrases
  • silicon dioxide
  • high speed
  • integrated circuit
  • selection algorithm
  • generation process
  • recovery algorithm
  • data sets
  • data mining
  • low power
  • flash memory
  • real world
  • generation method
  • leakage current