Time-differential sense amplifier for sub-80mV bitline voltage embedded STT-MRAM in 40nm CMOS.
Mihail JefremowThomas KernWolf AllersChristian PetersJan OtterstedtOthmane BahlousKarl HofmannRobert AllingerStephan KassenetterDoris Schmitt-LandsiedelPublished in: ISSCC (2013)
Keyphrases
- low voltage
- random access memory
- design considerations
- power supply
- cmos technology
- high power
- low power
- silicon on insulator
- metal oxide
- embedded systems
- low cost
- dynamic random access memory
- high speed
- power consumption
- power system
- power management
- power dissipation
- transmission line
- parallel processing
- delay insensitive
- motion vectors