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A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications.

Jonathan ChangYen-Huei ChenHank ChengWei-Min ChanHung-Jen LiaoQuincy LiStanley ChangSreedhar NatarajanRobin LeePing-Wei WangShyue-Shyh LinChung-Cheng WuKuan-Lun ChengMin CaoGeorge H. Chang
Published in: ISSCC (2013)
Keyphrases
  • high levels
  • power consumption
  • significantly lower
  • high correlation
  • wide range
  • high speed
  • high precision
  • times faster
  • low variance
  • leakage current
  • metal oxide