A 1 × 400 Backside-Illuminated SPAD Sensor With 49.7 ps Resolution, 30 pJ/Sample TDCs Fabricated in 3D CMOS Technology for Near-Infrared Optical Tomography.
Juan Mata PaviaMario ScandiniScott LindnerMartin WolfEdoardo CharbonPublished in: IEEE J. Solid State Circuits (2015)
Keyphrases
- cmos technology
- image sensor
- low power
- search tools
- cmos image sensor
- solid state
- video camera
- dynamic range
- spl times
- image processing algorithms
- low voltage
- imaging systems
- digital camera
- hardware and software
- power consumption
- parallel processing
- single chip
- high speed
- real time
- silicon on insulator
- light source
- motion blur
- low cost
- high resolution
- power dissipation
- charge coupled device
- image processing
- infrared
- sensor networks
- image sequences