Login / Signup

A 45-nm Dual-Port SRAM Utilizing Write-Assist Cells Against Simultaneous Access Disturbances.

Jui-Jen WuMeng-Fan ChangShau-Wei LuRobert LoQuincy Li
Published in: IEEE Trans. Circuits Syst. II Express Briefs (2012)
Keyphrases
  • power consumption
  • read write
  • power system
  • neural network
  • low power
  • access control
  • data transmission
  • cmos technology
  • leakage current