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Improvements on voltage-resistant performance of bipolar static induction transistor (BSIT) with buried gate structure.
YongShun Wang
JingJing Feng
ChunJuan Liu
Ziting Wang
ZaiXing Wang
Caizhen Zhang
Published in:
Sci. China Inf. Sci. (2012)
Keyphrases
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field effect transistors
silicon dioxide
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structural information
mathematical analysis
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data structure
high density
transmission line