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A 36.2 dB High SNR and PVT/Leakage-Robust eDRAM Computing-In-Memory Macro With Segmented BL and Reference Cell Array.
Sangwoo Ha
Sangjin Kim
Donghyeon Han
Soyeon Um
Hoi-Jun Yoo
Published in:
IEEE Trans. Circuits Syst. II Express Briefs (2022)
Keyphrases
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wide range
signal to noise ratio
high robustness
memory requirements
memory usage
microscopy images
memory size
edge detection
computationally efficient