Sherif M. Sharroush

Publication Activity (10 Years)

Years Active: 2007-2024
Publications (10 Years): 11

Top Topics

Cmos Technology

Top Venues

Microelectron. J.

Int. J. Circuit Theory Appl.

Publications

Sherif M. Sharroush, Yasser S. Abdalla
Design of a 3-bit 2.2 ps step 357.5 ps range 0.247 μm2 0.85 μW 45 nm All-MOS delay element. Integr. 96 (2024)
Sherif M. Sharroush, Emad Badry
Proposed time-mode wide fan-in NAND and NOR gates. Int. J. Circuit Theory Appl. 51 (7) (2023)
Sherif M. Sharroush
Optimum Sizing of the Sleep Transistor in MTCMOS Technology. NILES (2020)
Sherif M. Sharroush
Inverter-based voltage-controlled and programmable comparators. Int. J. Circuit Theory Appl. 48 (7) (2020)
Sherif M. Sharroush
An MTCMOS Subthreshold-Leakage Reduction Algorithm. NILES (2020)
Sherif M. Sharroush
A predischarged bitline 1T-1C DRAM readout scheme. Microelectron. J. 83 (2019)
Sherif M. Sharroush
Design of the CMOS inverter-based amplifier: A quantitative approach. Int. J. Circuit Theory Appl. 47 (7) (2019)
Sherif M. Sharroush
A Novel Current-Domain DRAM Readout Scheme. ICM (2019)
Sherif M. Sharroush
Time-Domain Readout of 1T-1C DRAM Cells. J. Circuits Syst. Comput. 27 (1) (2018)
Sherif M. Sharroush
A voltage-controlled ring oscillator based on an FGMOS transistor. Microelectron. J. 66 (2017)
Sherif M. Sharroush
Performance optimization of 1T-1C DRAMs: A quantitative study. Microelectron. J. 52 (2016)
Sherif M. Sharroush
An alternative to CMOS stacks based on a floating-gate transistor. ICECS (2015)
Sherif M. Sharroush
A novel self-referenced ferroelectric-memory readout scheme. ICECS (2015)
Sherif M. Sharroush
Reading DRAM cells using two properly designed cascaded inverters. Elektrotech. Informationstechnik 131 (2) (2014)
Sherif M. Sharroush
Low-power and high-speed DRAM readout scheme. ICECS (2013)
Sherif M. Sharroush, Yasser S. Abdalla, Ahmed A. Dessouki, El-Sayed A. El-Badawy
Dynamic random-access memories without sense amplifiers. Elektrotech. Informationstechnik 129 (2) (2012)
Aly E. Salama, Sherif M. Sharroush, Mahmoud Y. Fekry
Increasing the Sense Margin of 1T-1C Ferroelectric Random-Access Memories. ISCAS (2007)