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Increasing the Sense Margin of 1T-1C Ferroelectric Random-Access Memories.

Aly E. SalamaSherif M. SharroushMahmoud Y. Fekry
Published in: ISCAS (2007)
Keyphrases
  • random access
  • solid state
  • memory size
  • multiview video coding
  • support vector
  • flash memory
  • hard disk
  • disk storage
  • objective function
  • processing elements
  • random accesses
  • data model
  • knn
  • external memory