Miyo Miyashita

Publication Activity (10 Years)

Years Active: 1999-2021
Publications (10 Years): 8

Top Topics

Transient Response

Top Venues

IEICE Trans. Electron.

IEEE J. Solid State Circuits

Publications

Takaaki Yoshioka, Kenji Harauchi, Takumi Sugitani, Hiroaki Maehara, Takashi Yamasaki, Hiroaki Ichinohe, Miyo Miyashita, Kazuya Yamamoto, Seiki Goto
Ku-Band 70-/30-W-Class Internally Matched GaN Power Amplifiers With Low IMD3 Over a Wide Offset Frequency Range of Up To 400 MHz. IEEE J. Solid State Circuits 56 (9) (2021)
Takaaki Yoshioka, Kenji Harauchi, Takumi Sugitani, Takashi Yamasaki, Hiroaki Ichinohe, Miyo Miyashita, Kazuya Yamamoto, Seiki Goto
A Ku-band 70-W Class GaN Internally Matched High Power Amplifier with Wide Offset Frequencies of up to 400 MHz for Multi-Carrier Satellite Communications. BCICTS (2020)
Kazuya Yamamoto, Miyo Miyashita, Kenji Mukai, Shigeru Fujiwara, Satoshi Suzuki, Hiroaki Seki
Design and Measurements of Two-Gain-Mode GaAs-BiFET MMIC Power Amplifier Modules with Small Phase Discontinuity for WCDMA Data Communications. IEICE Trans. Electron. (1) (2018)
Kazuya Yamamoto, Miyo Miyashita, Takayuki Matsuzuka, Tomoyuki Asada, Kazunobu Fujii, Satoshi Suzuki, Teruyuki Shimura, Hiroaki Seki
Experimental Study on CDMA GaAs HBT MMIC Power Amplifier Layout Design for Reducing Turn-On Delay in Transient Response. IEICE Trans. Electron. (6) (2017)
Kazuya Yamamoto, Takayuki Matsuzuka, Miyo Miyashita, Kenichi Horiguchi, Shigeo Yamabe, Satoshi Suzuki, Hiroaki Seki
Design and Measurements of Building Blocks Supporting a 1.9-GHz-Band BiFET MMIC Power Amplifier for WCDMA Handsets. IEICE Trans. Electron. (7) (2016)
Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Hiroaki Seki
A Current-Mirror-Based GaAs-HBT RF Power Detector Suitable for Base Terminal Monitoring in an HBT Power Stage. IEICE Trans. Electron. (12) (2015)
Kazuya Yamamoto, Miyo Miyashita, Hitoshi Kurusu, Yoshinobu Sasaki, Satoshi Suzuki, Hiroaki Seki
A 3.5-GHz-Band GaAs HBT Stage-Bypass-Type Step-Gain Amplifier Using Base-Collector Diode Switches and Its Application to a WiMAX HBT MMIC Power Amplifier Module. IEICE Trans. Electron. (7) (2015)
Kazuya Yamamoto, Takayuki Matsuzuka, Miyo Miyashita, Kenichi Maeda, Satoshi Suzuki, Hiroaki Seki
0.8-/1.5-GHz-Band WCDMA HBT MMIC Power Amplifiers with an Analog Bias Control Scheme. IEICE Trans. Electron. (9) (2015)
Kazuya Yamamoto, Miyo Miyashita, Nobuyuki Ogawa, Takeshi Miura, Teruyuki Shimura
3.5-GHz-Band Low-Bias-Current Operation 0/20-dB Step Linearized Attenuators Using GaAs-HBT Compatible, AC-Coupled, Stack Type Base-Collector Diode Switch Topology. IEICE Trans. Electron. (7) (2007)
Kazuya Yamamoto, Takao Moriwaki, Takayuki Fujii, Jun Otsuji, Miyo Miyashita, Yukio Miyazaki, Kazuo Nishitani
A 2.2-V operation, 2.4-GHz single-chip GaAs MMIC transceiver for wireless applications. IEEE J. Solid State Circuits 34 (4) (1999)