Laurent Duraffourg

Publication Activity (10 Years)

Years Active: 2008-2016
Publications (10 Years): 3

Top Topics

Sensing Devices

Mass Spectrometry

Top Venues

Publications

Ludovic Laurent, Jean-Jacques Yon, Jean-Sebastien Moulet, Pierre Imperinetti, Laurent Duraffourg
Torsional nano-resonator: Characterization of a nonlinear hardening behavior and noise analysis. IEEE SENSORS (2016)
Issam Ouerghi, Willy Ludurczak, Laurent Duraffourg, Carine Ladner, Anouar Idrissi-El Oudrhiri, Patrice Gergaud, Maud Vinet, Thomas Ernst
Piezoresistive transduction optimization of p-doped poly-Silicon NEMS. ESSDERC (2015)
Thomas Ernst, Sebastien Hentz, Julien Arcamone, Vincent Agache, Laurent Duraffourg, Issam Ouerghi, Willy Ludurczak, Carine Ladner, Eric Ollier, Philippe Andreucci, Éric Colinet, Pierre Puget
High performance NEMS devices for sensing applications. ESSDERC (2015)
Olivier Martin, Éric Colinet, Eric Sage, Cecilia Dupre, Patrick Villard, Sebastien Hentz, Laurent Duraffourg, Thomas Ernst
Impact of process variability on a frequency-addressed NEMS array sensor used for gravimetric detection. ESSDERC (2013)
R. Perenon, Eric Sage, Ali Mohammad-Djafari, Laurent Duraffourg, Sebastien Hentz, A. Brenac, Robert Morel, P. Grangeat
Bayesian inversion of multi-mode NEMS mass spectrometry signal. EUSIPCO (2013)
Gregory Arndt, Cecilia Dupre, Julien Arcamone, Gerald Cibrario, Olivier Rozeau, Laurent Duraffourg, Eric Ollier, Éric Colinet
Towards ultra-dense arrays of VHF NEMS with FDSOI-CMOS active pixels for sensing applications. ISSCC (2012)
Éric Colinet, Cedric Durand, Laurent Duraffourg, Patrick Audebert, Guillaume Dumas, Fabrice Casset, Eric Ollier, Pascal Ancey, Jean-François Carpentier, Lionel Buchaillot, Adrian M. Ionescu
Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process. IEEE J. Solid State Circuits 44 (1) (2009)
Éric Colinet, Cedric Durand, Patrick Audebert, Philippe Renaux, Denis Mercier, Laurent Duraffourg, Eric Ollier, Fabrice Casset, Pascal Ancey, Lionel Buchaillot, Adrian M. Ionescu
Measurement of Nano-Displacement Based on In-Plane Suspended-Gate MOSFET Detection Compatible with a Front-End CMOS Process. ISSCC (2008)