Measurement of Nano-Displacement Based on In-Plane Suspended-Gate MOSFET Detection Compatible with a Front-End CMOS Process.
Éric ColinetCedric DurandPatrick AudebertPhilippe RenauxDenis MercierLaurent DuraffourgEric OllierFabrice CassetPascal AnceyLionel BuchaillotAdrian M. IonescuPublished in: ISSCC (2008)