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Jin-Ping Ao
Publication Activity (10 Years)
Years Active: 2005-2021
Publications (10 Years): 1
Top Topics
Micro Controller
Schottky Barrier
Image Sensor
Heat Flow
Top Venues
IEICE Electron. Express
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Publications
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Liang He
,
Yiqiang Ni
,
Liuan Li
,
Zhiyuan He
,
Xiaobo Li
,
Taofei Pu
,
Jin-Ping Ao
Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor.
IEICE Electron. Express
18 (19) (2021)
Cheng-Yu Hu
,
Katsutoshi Nakatani
,
Hiroji Kawai
,
Jin-Ping Ao
,
Yasuo Ohno
Characteristics of GaN HEMT with p-GaN Substrate Layer.
IEICE Trans. Electron.
(8) (2010)
Yusuke Ikawa
,
Yorihide Yuasa
,
Cheng-Yu Hu
,
Jin-Ping Ao
,
Yasuo Ohno
2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection.
IEICE Trans. Electron.
(8) (2010)
Cheng-Yu Hu
,
Jin-Ping Ao
,
Masaya Okada
,
Yasuo Ohno
A Study on Ohmic Contact to Dry-Etched p-GaN.
IEICE Trans. Electron.
(7) (2008)
Jin-Ping Ao
,
Yuya Yamaoka
,
Masaya Okada
,
Cheng-Yu Hu
,
Yasuo Ohno
Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress.
IEICE Trans. Electron.
(7) (2008)
Masaya Okada
,
Ryohei Takaki
,
Daigo Kikuta
,
Jin-Ping Ao
,
Yasuo Ohno
Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage.
IEICE Trans. Electron.
(7) (2006)
Daigo Kikuta
,
Jin-Ping Ao
,
Junya Matsuda
,
Yasuo Ohno
A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET.
IEICE Trans. Electron.
(7) (2006)
Daigo Kikuta
,
Jin-Ping Ao
,
Yasuo Ohno
Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure.
IEICE Trans. Electron.
(4) (2005)