BCICTS

Publications

2023

Shuvadip Ghosh, Hao Li, Nils Pohl
Low Phase Noise and Low Power Consumption Magnetic Cross-Coupled Push-Push VCO in SiGe BiCMOS Technology. BCICTS (2023)
Hanh-Phuc Le, Casey Hardy, Hieu Pham, Mohamed Mehdi Jatlaoui, Frederic Voiron, Patrick P. Mercier, Po-Han Chen, Saket Jha
Vertical Power Delivery and Heterogeneous Integration for High-Performance Computing. BCICTS (2023)
Anthony Romano, Timothy Sonnenberg, Zoya Popovic
46-102 GHz GaN Balanced Cascode Amplifier-Isolator. BCICTS (2023)
Jeff Shih-Chieh Chien, Eythan Lam, James F. Buckwalter
An 18.6-dBm, 8-Way-Combined D-Band Power Amplifier with 21.6% PAE in 22-nm FD-SOI CMOS. BCICTS (2023)
Mike Peters, David A. Britz, Miao-Chun Chen, Manish Hemkar, Andy Lo
High Volume Wafer Fab Equipment for RF Technologies. BCICTS (2023)
Senne Gielen, Yang Zhang, Mark Ingels, Patrick Reynaert
A Compact 0.98 THz Source With On-Chip Antenna In 250-nm InP DHBT. BCICTS (2023)
Jianan Zhao, Sorin P. Voinigescu
An 80-GBaud PAM-4 $G_{\mathrm{m}}$ -Boosted Variable-Gain TIA in 22-nm FDSOI. BCICTS (2023)
Ethan Chou, Hesham Beshary, Meng Wei, Rami Hijab, Farhana Sheikh, Steven Callender, Ali M. Niknejad
Comparative Performance of 100-200 GHz Wideband Transceivers: CMOS vs Compound Semiconductors. BCICTS (2023)
Omar Hassan, Mir Mahmud, Abdulrahman A. Alhamed, Gabriel M. Rebeiz
A Wideband Ultra-Low Noise 15-55 GHz Dual-Beam Receive Phased-Array Beamformer with 2.9-4.2 dB NF. BCICTS (2023)
Venkata Vanukuru, Hari Kakara, Santosh Gedela, Vaibhav Ruparelia, Prateek Kumar Sharma
Analog/mmWave Circuit Demonstrations in State-of-the-Art SiGe BiCMOS Process for 5G and Optical Transceivers. BCICTS (2023)
Prateek Kumar Sharma, Vaibhav Ruparelia, Saurabh Sirohi, Uppili S. Raghunathan, Venkat Vanukuru, Vibhor Jain
Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers. BCICTS (2023)
Farooq Amin, Shuai Zhou, Long Huang, Christopher Latorre, Folu Popoola, Parrish Ralston
Gen1 Active Tunable SiGe Integrated Parallel Synthesis Filters (PSF) without Q-Enhancement. BCICTS (2023)
Guy Torfs, Bart Moeneclaey, Joris Lambrecht, Cedric Bruynsteen, Jakob Declerq, Shengpu Niu, Nishant Singh, Marijn Verbeke, Xin Yin, Peter Ossieur, Johan Bauwelinck
High-Speed SiGe BiCMOS Circuits for Optical Communication. BCICTS (2023)
Marvin Marbell, Yueying Liu, Michelle Tran, Haedong Jang, Mehdi Hasan, Dan Etter, Dan Namishia, Dan Stasiw, Jeremy Fisher, Scott T. Sheppard, Basim Noori
Modeling and Simulation of Discrete Silicon Carbide Integrated Passive Devices in High-Power RF Amplifiers. BCICTS (2023)
Bin Li, Andre G. Metzger, Cristian Cismaru, Yingying Yang
A Novel Base Resistance Model Incorporating Base Distributive Effects Along with Emitter Length. BCICTS (2023)
Damla Dimlioglu, Alyosha C. Molnar
Demonstration of a Ku-Band N-Path Downconverter in GaN-on-SiC. BCICTS (2023)
John D. Cressler
The SiGe HBT at Cryogenic Temperatures: Invited Pager. BCICTS (2023)
Jackson P. Moody, Jeffrey W. Teng, John D. Cressler
The Impact of BEOL Stress on SiGe HBTs at Cryogenic Temperatures. BCICTS (2023)
Hans Rohdin, Bart Jansen, William Snodgrass, J. Stephen Kofol, Sonja Nedeljkovic, Ziad El Chami, William Sutton, Tom Dungan
Practical and Efficient Approaches to Device Modeling and Power Amplifier Module Design. BCICTS (2023)
A. Gauthier, E. Brezza, A. Montagné, N. Guitard, J. Azevedo Goncalves, Michel Buczko, S. Jan, N. Derrier, Didier Céli, C. Deglise-Favre, J. Ma, H. Audouin, F. Deprat, I D. Ristoiu, L. Berthier, L. Clément, B. Grelaud, C. Rougier, Pascal Chevalier
Low-Noise Si/SiGe HBT for LEO Satellite User Terminals in Ku-Ka Bands. BCICTS (2023)
Justin J. Kim, Wonho Lee, James F. Buckwalter
A 12-162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination. BCICTS (2023)
Michael Litchfield, Andrew Kingswood
A 4-18 GHz, 35 W GaN MMIC Power Amplifier with Improved Thermal Performance. BCICTS (2023)
Ivan Berdalovic, Mirko Poljak, Tomislav Suligoj
Optimization of GaN HEMTs with ScAlN Barrier for High 2DEG Density and Low on-Resistance. BCICTS (2023)
Dongyang Yan, Yang Zhang, Dries Peumans, Mark Ingels, Piet Wambacq
A 33 dBm, >30% PAE GaN Power Amplifier Based on a Sub-Quarter-Wavelength Balun for 5G Applications. BCICTS (2023)
B. Grote, B. Green, C. Gaw, Y. Wei, D. Hill, P. Renaud, J. Wan, C. Rampley, D. Burdeaux, K. Foxx, M. Vadipour, D. Currier, C. Zhu, H. Kabir, T. Arnold, H. Stewart, D. Ferguson, J. Higginbottom, P. Hu
High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory Effects. BCICTS (2023)
Romain Hersent, Filipe Jorge, Fabrice Blache, Bernadette Duval, Michel Goix, Haïk Mardoyan, Sylvain Almonacil, M. Xu, Y. Zhu, L. Chen, Z. Hu, Jeremie Renaudier, Muriel Riet, Agnieszka Konczykowska, Bertrand Ardouin
100 GBaud DSP-Free PAM-4 Optical Signal Generation Using an InP-DHBT AMUX-Driver and a Thin-Film Lithium Niobate Modulator Assembly. BCICTS (2023)
Cristina Maurette-Blasini, Rainer Weber, Sandrine Wagner, Dirk Schwantuschke, Sébastien Chartier, Rüdiger Quay
Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) Applications. BCICTS (2023)
Harrison P. Lee, Nelson Sepúlveda-Ramos, Jeffrey W. Teng, Jackson P. Moody, Delgermaa Nergui, Brett L. Ringel, Zachary R. Brumbach, Alizeh Premani, Uppili S. Raghunathan, Vibhor Jain, John D. Cressler
The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs. BCICTS (2023)
Amirreza Alizadeh, Utku Soylu, Navneet Sharma, Gary Xu, Mark J. W. Rodwell
D-Band Power Amplifier with 27 dBm Peak Output Power and 14.9% PAE in 250-nm InP HBT Technology. BCICTS (2023)
Thomas Zimmer, Sébastien Fregonese, Anjan Chakravorty
Electro-Thermal Investigation of SiGe HBTs: A Review. BCICTS (2023)
Christoph Weimer, Viktor Kazantsev, Markus Mäller, Michael Schröter
Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs. BCICTS (2023)
Axel Tessmann, Arnulf Leuther, Fabian Thome, Laurenz John, Bersant Gashi, Hermann Massler, Alexander Saam, Sébastien Chartier
Advanced mHEMT Technologies for Use in Radar, Communication and Meteorological Applications. BCICTS (2023)
Melika Dedovic, Florian Vogelsang, Hakan Papurcu, Klaus Aufinger, Nils Pohl
A 61-187.2-GHz Traveling Wave Push-Push Frequency Doubler in a 130 nm SiGe:C BiCMOS Technology With 101.7% Fractional Bandwidth. BCICTS (2023)
Mohamadali Malakoutian, Srabanti Chowdhury
On Extracting the Maximum Power Density at High Frequencies from Gallium Nitride and Related Materials. BCICTS (2023)
Mohammed Iftekhar, Harshan Gowda, Pascal Kneuper, Babak Sadiye, Wolfgang Mueller, Johann-Christoph Scheytt
A 28-Gb/s 27.2mW NRZ Full-Rate Bang-Bang Clock and Data Recovery in 22 nm FD-SOI CMOS Technology. BCICTS (2023)
Michael Litchfield
A 15-24 GHz, 15W Reactively Matched GaN MMIC Power Amplifier. BCICTS (2023)
Batuhan Sutbas, Mohamed Hussein Eissa, Gerhard Kahmen
A Ka-Band VCO Chip with Integrated Dividers Using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar Sensors. BCICTS (2023)
David Fanning, Andrea Corrion, Georges Siddiqi, Souheil Nadri, Dan Denninghoff, F. Erdem Arkun, Sadaf Dadafshar, Ignacio Ramos, Harris Moyer, Andy Fu, John Carlson, Shyam Bharadwaj
Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process. BCICTS (2023)
Hari Vemuri, Armagan Dascurcu, Kexin Li, Harish Krishnaswamy
Wideband Switched-Capacitor and Switched-Transmission-line Circulators in 40nm GaN Technology: Design and Device Modeling. BCICTS (2023)
Shahriar Shahramian, Mustafa Sayginer, Michael J. Holyoak, Mohamed Elkhouly, Mike Zierdt, Jaegeun Ha, Joe Weiner, Yves Baeyens
Practical Approaches to Industrializing Near-THz Communication Systems. BCICTS (2023)
Alexander Meyer, Peter Toth, Axel Engelhardt, Jens Repp, Matthias Brand, Vadim Issakov
A 12 Bit R-2R Digital-to-Analog Converter for Shuttling Operation in a Trapped-Ion Quantum Computer. BCICTS (2023)
F. Ciabattini, Akshay M. Arabhavi, Sara Hamzeloui, M. Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi
Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers. BCICTS (2023)
David J. Niven, Simon J. Mahon, Andrew J. Jones, Melissa C. Gorman
Transient Field-Plate Thermometry in Cascode FET Power Amplifiers. BCICTS (2023)
Beng Woon Lim, Ajay Raman, Saurabh Sirohi
Simulation of DC Safe Operating Area and RF Breakdown in SiGe PA HBT. BCICTS (2023)
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023 BCICTS (2023)
Rob D. Jones, Jerome Cheron, Bryan T. L. Bosworth, Benjamin F. Jamroz, Dylan F. Williams, Miguel E. Urteaga, Ari D. Feldman, Peter H. Aaen
Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz. BCICTS (2023)
Utku Soylu, Amirreza Alizadeh, Munkyo Seo, Ahmed S. H. Ahmed, Mark J. W. Rodwell
A 202 GHz Link Using Planar Transceiver Modules. BCICTS (2023)
Olga Krylova, Jan Schopfel, Klaus Aufinger, Nils Pohl
A High Linearity SiGe D-Band Diode Ring Mixer. BCICTS (2023)
Kathleen Muhonen, Jayashree Jayabalan, Scott Parker
Flipchip Characterization for RF SOI Switch Model Improvement. BCICTS (2023)
Simon Mok, Norman Chiang, Vivian Law, James J. Sowers
Fully Qualified Gallium Nitride Power Amplifier for Use in Ka-Band Commercial Space Applications. BCICTS (2023)