VLSI Technology and Circuits

Publications

2023

Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Wan-Hsuan Hsieh, Jer-Fu Wang, Jia-Yang Lee, Yifan Xing, Guan-Hua Chen, C. W. Liu
-Si/Ge Substrates Achieving Record 2Pr = 84 μC/cm² and Endurance > 1E11. VLSI Technology and Circuits (2023)
Jung-Won Han, S. H. Park, M. Y. Jeong, K. S. Lee, K. N. Kim, H. J. Kim, J. C. Shin, S. M. Park, S. H. Shin, S. W. Park, K. S. Lee, J. H. Lee, S. H. Kim, B. C. Kim, M. H. Jung, I. Y. Yoon, H. Kim, S. U. Jang, K. J. Park, Y. K. Kim, I. G. Kim, J. H. Oh, S. Y. Han, B. S. Kim, B. J. Kuh, J. M. Park
Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM -. VLSI Technology and Circuits (2023)
Junnosuke Suzuki, Jaehoon Yu, Mari Yasunaga, Ángel López García-Arias, Yasuyuki Okoshi, Shungo Kumazawa, Kota Ando, Kazushi Kawamura, Thiem Van Chu, Masato Motomura
Pianissimo: A Sub-mW Class DNN Accelerator with Progressive Bit-by-Bit Datapath Architecture for Adaptive Inference at Edge. VLSI Technology and Circuits (2023)
Chihiro Okada, Sozo Yokogawa, Yuhi Yorikado, Katsumi Honda, Naoki Okuno, Ryohei Ikeno, Makoto Yamakoshi, Hiroshi Ito, Shohei Yoshitsune, Masatsugu Desaki, Shota Hida, Atsushi Nose, Hayato Wakabayashi, Fumihiko Koga
216 fps 672 × 512 pixel 3 μm Indirect Time-of-Flight Image Sensor with 1-Frame Depth Acquisition for Motion Artifact Suppression. VLSI Technology and Circuits (2023)
W.-C. Chen, S.-H. Chen, Anabela Veloso, Kateryna Serbulova, Geert Hellings, Guido Groeseneken
Upcoming Challenges of ESD Reliability in DTCO with BS-PDN Routing via BPRs. VLSI Technology and Circuits (2023)
Shoubhik Karmakar, Huajun Zhang, Marco Berkhout, Qinwen Fan
A Class-D Piezoelectric Speaker Driver Using A Quadrature Feedback Chopping Scheme achieving 29dB Large-Signal THD+N Improvement. VLSI Technology and Circuits (2023)
Nick Zhang, Young Suk Kim, Peter Hsu, Samsoo Kim, Derek Tao, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li, Tsung-Yung Jonathan Chang
A 4.24GHz 128X256 SRAM Operating Double Pump Read Write Same Cycle in 5nm Technology. VLSI Technology and Circuits (2023)
P.-F. Rüedi, R. Quaglia, H.-R. Graf
A 90 μW at 1 fps and 1.33 mW at 30 fps 120 dB intra-scene dynamic range 640 × 480 stacked image sensor for autonomous vision systems. VLSI Technology and Circuits (2023)
Tuur Van Daele, Filip Tavernier
. VLSI Technology and Circuits (2023)
Sunghyun Yoon, Sung-In Hong, Daehyun Kim, Garam Choi, Young Mo Kim, Kyunghoon Min, Seiyon Kim, Myung-Hee Na, Seonyong Cha
QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering. VLSI Technology and Circuits (2023)
S. Ko, J. H. Park, J. H. Bak, H. Jung, J. Shim, D. S. Kim, W. Lim, D.-E. Jeong, J. H. Lee, K. Lee, J.-H. Park, Y. Kim, C. Kim, J. H. Jeong, C. Y. Lee, S. H. Han, Y. Ji, S. H. Hwang, H. J. Shin, K. Lee, Y. J. Song, Y. G. Shin, J. H. Song
Highly Reliable and Manufacturable MRAM embedded in 14nm FinFET node. VLSI Technology and Circuits (2023)
Yumito Aoyagi, Makoto Yabuuchi, Tomotaka Tanaka, Yuichiro Ishii, Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Isabel Wang, Yu-Hao Hsu, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang
A 3-nm 27.6-Mbit/mm2 Self-timed SRAM Enabling 0.48 - 1.2 V Wide Operating Range with Far-end Pre-charge and Weak-Bit Tracking. VLSI Technology and Circuits (2023)
Wooyoung Jo, Sangjin Kim, Juhyoung Lee, Donghyeon Han, Sangyeob Kim, Seungyoon Choi, Hoi-Jun Yoo
NeRPIM: A 4.2 mJ/frame Neural Rendering Processing-in-memory Processor with Space Encoding Block-wise Mapping for Mobile Devices. VLSI Technology and Circuits (2023)
Seongho Kim, Young-Keun Park, Gyu Soup Lee, Eui Joong Shin, Woon-San Ko, Hi Deok Lee, Ga-Won Lee, Byung Jin Cho
Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor. VLSI Technology and Circuits (2023)
J. Lee, J. Jeong, S. Lee, S. Lee, J. Lim, S. C. Song, S. Ekbote, N. Stevens-Yu, D. Greenlaw, Rock-Hyun Baek
Front-side and Back-side Power Delivery Network Guidelines for 2nm node High Perf Computing and Mobile SoC applications. VLSI Technology and Circuits (2023)
M. Shamanna, E. Abuayob, G. Aenuganti, C. Alvares, J. Antony, A. Bahudhanam, A. Chandran, P. Chew, A. Chatterjee, B. Chauhan, N. Dandeti, J. Desai, M. Doyle, T. Dmukauskas, P. Farache, E. Fetzer, K. Fischer, P. Hack, Y. Greenzweig, J. Giacobbe, Walid M. Hafez, E. Haralson, A. Hegde, A. Illa, M. Islam, S. Jain, M. Jang, J. Nguyen, T. Tong, L. Jiang, Eric Karl, P. Kalangi, G. Khoo, A. Krishnamoorthy, B. Kuns, W. Li, R. Livengood, T. Malik, R. Priyanka, H. Faraby, Y. Maymon, K. Mistry, K. Morgan, S. Natarajan, O. Nevo, M. Oh, P. Pardy, J. Park, P. Penmatsa, B. Phelps, C. Peterson, S. Rajappa, A. Raveh, A Rezaie, T. Ravishankar, R. Ramaswamy, S. Reddy, R. Saha, S. Sen, R. Sanchez, R. Sanaga, B. Simkhovich, Bernhard Sell, M. Senger, B. Schnarch, M. Seshadri, O. Sidorov, S. Subramanian, K. Subramanian, B. Truong, S. Bangalore, Jeffery Hicks, S. Venkatesh, D. Christensen, K. Bhargav, M. Von Haartman, P. Joshi, S. Zickel, C.-H. Lin, J. Huening, T.-H. Wu, N. Bakken, A. Afzal, A. Raman, Sj. Rao, V. Kawar, J. Neirynck, D. Bradley, M. Duwe, S. Wu, V. Patil, M. Bayoumy
E-Core Implementation in Intel 4 with PowerVia (Backside Power) Technology. VLSI Technology and Circuits (2023)
Seongjae Heo, Dongmin Kim, Wooseok Choi, Sanghyun Ban, Ohhyuk Kwon, Hyunsang Hwang
Experimental Demonstration of Probabilistic-Bit (p-bit) Utilizing Stochastic Oscillation of Threshold Switch Device. VLSI Technology and Circuits (2023)
Tathagata Srimani, A. C. Yu, Robert M. Radway, D. T. Rich, M. Nelson, S. Wong, D. Murphy, S. Fuller, Gage Hills, S. Mitra, Max M. Shulaker
Foundry Monolithic 3D BEOL Transistor + Memory Stack: Iso-performance and Iso-footprint BEOL Carbon Nanotube FET+RRAM vs. FEOL Silicon FET+RRAM. VLSI Technology and Circuits (2023)
Y. Okamoto, Y. Komura, T. Mizuguchi, T. Saito, M. Ito, K. Kimura, Tatsuya Onuki, Yoshinori Ando, H. Sawai, T. Murakawa, H. Kunitake, Takanori Matsuzaki, H. Kimura, M. Fujita, M. Ikeda, Shunpei Yamazaki
1Mbit 1T1C 3D DRAM with Monolithically Stacked One Planar FET and Two Vertical FET Heterogeneous Oxide Semiconductor layers over Si CMOS. VLSI Technology and Circuits (2023)
Mario Sako, T. Nakajima, Fumihiro Kono, T. Nakano, Masaki Fujiu, Junji Musha, Dai Nakamura, Naoaki Kanagawa, Y. Shimizu, Kosuke Yanagidaira, Tetsuaki Utsumi, T. Kawano, Yoshikazu Hosomura, Hiroki Yabe, M. Kano, Hiroshi Sugawara, A. H. Sravan, K. Hayashi, Toshiyuki Kouchi, Y. Watanabe
bit density with 3.2Gbps interface and 205MB/s program throughput. VLSI Technology and Circuits (2023)
Seongil Yeo, Uyong Hyeon, Mingyeong Kim, Jusung Kim, Kunhee Cho
A 19.8W/29.6W Hybrid Step-Up/Down DC-DC Converter with 97.2% Peak Efficiency for 1-Cell/2-Cell Battery Charger Applications. VLSI Technology and Circuits (2023)
Sundeep Javvaji, Muhammed Bolatkale, Shagun Bajoria, Robert Rutten, Bert Oude-Essink, Koen Beijens, Kofi A. A. Makinwa, Lucien J. Breems
A 6GHz Multi-Path Multi-Frequency Chopping CTΔΣ Modulator achieving 122dBFS SFDR from 150kHz to 120MHz BW. VLSI Technology and Circuits (2023)
Jiheon Park, Daeyun Kim, Hoyong Lee, Seung-Chul Shin, Myoungoh Ki, Bumsik Chung, Myunghan Bae, Myeonggyun Kye, Jonghan Ahn, Inho Song, Sunhwa Lee, Jaeil An, Il-Pyeong Hwang, Taemin An, Young-Gu Jin, Youngchan Kim, Youngsun Oh, Juhyun Ko, Haechang Lee, Joonseo Yim
An Indirect Time-of-Flight CMOS Image Sensor Achieving Sub-ms Motion Lagging and 60fps Depth Image from On-chip ISP. VLSI Technology and Circuits (2023)
Jonathan Chang, Yen-Huei Chen, Gary Chan, Kuo-Cheng Lin, Po-Sheng Wang, Yangsyu Lin, Sevic Chen, Peijiun Lin, Ching-Wei Wu, Chih-Yu Lin, Yi-Hsin Nien, Hidehiro Fujiwara, Atul Katoch, Robin Lee, Hung-Jen Liao, Jhon-Jhy Liaw, Shien-Yang Michael Wu, Quincy Li
A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications. VLSI Technology and Circuits (2023)
Mitsuya Fukazawa, Tetsuo Matsui
A 24-OSR to Simplify Anti-Aliasing Filter 2MHz-BW 83dB-DR 3rd-order DT-DSM using FIA-Based Integrator and Noise-Shaping SAR Combined Digital Noise-Coupling Quantizer. VLSI Technology and Circuits (2023)
Jaeyong Jeong, Seong Kwang Kim, Yoon-Je Suh, Jisung Lee, Joonyoung Choi, Juhyuk Park, Joon Pyo Kim, Bong Ho Kim, Younjung Jo, Seung-Young Park, Jongmin Kim, Sanghyeon Kim
Cryogenic RF Transistors and Routing Circuits Based on 3D Stackable InGaAs HEMTs with Nb Superconductors for Large-Scale Quantum Signal Processing. VLSI Technology and Circuits (2023)
Daisuke Kobayashi, Kazuyuki Hirose
How Harsh is Space?-Equations That Connect Space and Ground VLSI. VLSI Technology and Circuits (2023)
Xiaolin Wang, Zijie Zheng, Qiwen Kong, Leming Jiao, Kaizhen Han, Chen Sun, Zuopu Zhou, Long Liu, Yuye Kang, Gan Liu, Dong Zhang, Xiao Gong
Endurance, and 58.3% Area Saving. VLSI Technology and Circuits (2023)
Attilio Belmonte, S. Kundu, S. Subhechha, Adrian Vaisman Chasin, Nouredine Rassoul, Harold Dekkers, H. Puliyalil, F. Seidel, P. Carolan, Romain Delhougne, Gouri Sankar Kar
A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT. VLSI Technology and Circuits (2023)
K.-Y. Hsiang, J.-Y. Lee, F.-S. Chang, Z.-F. Lou, Z.-X. Li, Z.-H. Li, J.-H. Chen, C. W. Liu, T.-H. Hou, Min-Hung Lee
FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. VLSI Technology and Circuits (2023)
Gajanan Jedhe, Chetan Deshpande, Sushil Kumar, Cheng-Xin Xue, Zijie Guo, Ritesh Garg, Kim Soon Jway, En-Jui Chang, Jenwei Liang, Zhe Wan, Zhenhao Pan
A 12nm 137 TOPS/W Digital Compute-In-Memory using Foundry 8T SRAM Bitcell supporting 16 Kernel Weight Sets for AI Edge Applications. VLSI Technology and Circuits (2023)
Yi-Lin Lo, Yu-Chen Lo, Chia-Hsiang Yang
A 169mW Fully-Integrated Ultrasound Imaging Processor Supporting Advanced Modes for Hand-Held Devices. VLSI Technology and Circuits (2023)
Gyuseong Kang, Hyunjin Shin, Hyuntaek Jung, Sunkyu Lee, Jaeseung Choi, Sangyeop Baek, Hyunsung Jung, Daeshik Kim, Sohee Hwang, Shinhee Han, Yongsung Ji, Sei Seung Yoon
A 14nm 128Mb Embedded MRAM Macro achieved the Best Figure-Of-Merit with 80MHz Read operation and 18.1Mb/mm² implementation at 0.64V. VLSI Technology and Circuits (2023)
Junjie Mu, Chengshuo Yu, Tony Tae-Hyoung Kim, Bongjin Kim
A Bit-Serial Computing Accelerator for Solving Coupled Partial Differential Equations. VLSI Technology and Circuits (2023)
Hisashi Inoue, Hiroto Tamura, Ai Kitoh, Xiangyu Chen, Zolboo Byambadorj, Takeaki Yajima, Yasushi Hotta, Tetsuya Iizuka, Gouhei Tanaka, Isao H. Inoue
Long-time-constant leaky-integrating oxygen-vacancy drift-diffusion FET for human-interactive spiking reservoir computing. VLSI Technology and Circuits (2023)
Zhuocheng Zhang, Zehao Lin, Chang Niu, Mengwei Si, Muhammad Ashraful Alam, Peide D. Ye
Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing. VLSI Technology and Circuits (2023)
Kihwang Son, Seulki Park, Kyunghoon Jung, Jun-Gyu Kim, Younggun Ko, Keonyong Cheon, Changkeun Yoon, Jiho Kim, Jaehun Jeong, Taehun Myung, Changmin Hong, Weonwi Jang, Min-Chul Sun, Sungil Jo, Ju-Youn Kim, Byungmoo Song, Yuri Yasuda-Masuoka, Ja-Hum Ku, Gitae Jeong
Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells. VLSI Technology and Circuits (2023)
Navid Anjum Aadit, Masoud Mohseni, Kerem Yunus Camsari
Accelerating Adaptive Parallel Tempering with FPGA-based p-bits. VLSI Technology and Circuits (2023)
Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, Masaharu Kobayashi
A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices. VLSI Technology and Circuits (2023)
Song Wang, Bing Yu, Wenwu Xiao, Fujun Bai, Xiaodong Long, Liang Bai, Xuerong Jia, Fengguo Zuo, Jie Tan, Yixin Guo, Peng Sun, Jun Zhou, Qiong Zhan, Sheng Hu, Yu Zhou, Yi Kang, Qiwei Ren, Xiping Jiang
A 135 GBps/Gbit 0.66 pJ/bit Stacked Embedded DRAM with Multilayer Arrays by Fine Pitch Hybrid Bonding and Mini-TSV. VLSI Technology and Circuits (2023)
Sunghwan Kim, Geun-Myeong Kim, Seong-Nam Kim, Saetbyeol Ahn, Yoon-Suk Kim, Inkook Jang, Kyoung-Woo Lee, Dae Sin Kim
Structural Reliability and Performance Analysis of Backside PDN. VLSI Technology and Circuits (2023)
Chih-Hang Tung, Doug C. H. Yu
An Integrated System Scaling Solution for Future High Performance Computing. VLSI Technology and Circuits (2023)
Liang-Hsin Lin, Zih-Sing Fu, Po-Shao Chen, Bo-Yin Yang, Chia-Hsiang Yang
A 4.8mW, 800Mbps Hybrid Crypto SoC for Post-Quantum Secure Neural Interfacing. VLSI Technology and Circuits (2023)
Charles Augustine, Pascal Meinerzhagen, Wootaek Lim, A. Veerabathini, M. Bright, K. Mojjada, Jim Tschanz, Muhammad M. Khellah, Vivek De
A 2.6 mV/b Resolution, 1.2 GHz Throughput, All-Digital Voltage Droop Monitor Using Coupled Ring Oscillators in Intel 4 CMOS. VLSI Technology and Circuits (2023)
Jeongkyun Kim, Byungho Yook, Taemin Choi, Kyuwon Choi, Chanho Lee, Yunrong Li, Youngo Lee, Seok Yun, Changhoon Do, Hoyoung Tang, Inhak Lee, Dongwook Seo, Sangyeop Baeck
A 4.0GHz UHS Pseudo Two-port SRAM with BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4nm FinFET Technology. VLSI Technology and Circuits (2023)
Weichen Tao, Weichen Zhao, Robert Bogdan Staszewski, Fujiang Lin, Yizhe Hu
An 18.8-to-23.3 GHz ADPLL Based on Charge-Steering-Sampling Technique Achieving 75.9 fs RMS Jitter and -252 dB FoM. VLSI Technology and Circuits (2023)
Dongqi Zheng, Adam Charnas, Jian-Yu Lin, Jackson Anderson, Dana Weinstein, Peide D. Ye
Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility. VLSI Technology and Circuits (2023)
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori
Determining the low-frequency noise source in cryogenic operation of short-channel bulk MOSFETs. VLSI Technology and Circuits (2023)
Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Jhon-Jhy Liaw, Shien-Yang Michael Wu, Quincy Li, Hidehiro Fujiwara, Hung-Jen Liao, Tsung-Yung Jonathan Chang
3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM with 0.5V-1.4V Wide Voltage Range Operation in 3nm FinFET for HPC Applications. VLSI Technology and Circuits (2023)
Zuopu Zhou, Leming Jiao, Zijie Zheng, Xiaolin Wang, Dong Zhang, Kai Ni, Xiao Gong
First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack. VLSI Technology and Circuits (2023)