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Overview
- electronic devices
- energy efficiency
- technical aspects
- high frequencies
- gate insulator
Publications
PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride Transistors.
IRPS
Small-Signal, High Frequency Performance of Vertical GaN FinFETs with fmax = 5.9 GHz.
DRC
Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors.
DRC
Materials and Technology Issues for the Next Generation of Power Electronic Devices.
DRC
First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate.
DRC
Energy Efficiency Optimization-Based Joint Resource Allocation and Clustering Algorithm for M2M Communication Networks (Workshop).
ChinaCom (2)