Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm, max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec.
Kaifei ChenJiebin NiuGuanhua YangMenggan LiuWendong LuFuxi LiaoKailiang HuangXinLv DuanCongyan LuJiawei WangLingfei WangMengmeng LiDi GengChao ZhaoGuilei WangNianduan LuLing LiMing LiuPublished in: VLSI Technology and Circuits (2022)