Transimpedance Amplifier with Peaking-Dedicated Inductor in 65-nm CMOS.
Akira TsuchiyaAkitaka HiratsukaKenji TanakaHiroyuki FukuyamaNaoki MiuraHideyuki NosakaHidetoshi OnoderaPublished in: IEICE Trans. Electron. (2020)
Keyphrases
- cmos technology
- silicon on insulator
- nm technology
- low power
- high power
- metal oxide semiconductor
- dynamic range
- power consumption
- high speed
- low cost
- image sensor
- power supply
- high sensitivity
- analog vlsi
- hilbert curve
- cmos image sensor
- circuit design
- single chip
- database
- power dissipation
- low voltage
- delay insensitive
- vlsi circuits
- integrated circuit
- signal to noise ratio
- data structure
- information systems
- artificial intelligence
- learning algorithm
- neural network
- data sets