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cell in 32nm high-k metal-gate CMOS.

Yuki FujimuraOsamu HirabayashiTakahiko SasakiAzuma SuzukiAtsushi KawasumiYasuhisa TakeyamaKeiichi KushidaGou FukanoAkira KatayamaYusuke NikiTomoaki Yabe
Published in: ISSCC (2010)
Keyphrases
  • search engine
  • cmos technology
  • nm technology
  • low power
  • metal oxide semiconductor
  • power consumption
  • field effect transistors
  • data sets
  • high speed
  • wide range
  • low cost
  • high temperature