High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer.
Md. Iktiham Bin TaherYacine HalfayaRouba AlrammouzMathieu LazergesAurelien RandiTarik MoudakirNossikpendou Yves SamaThomas GuermontNicolas PelissierThomas PichlerMédéric PiedevacheJacques PirononSimon GautierPublished in: IEEE SENSORS (2021)