A Compact 19.7- to 43.8-GHz Power Amplifier With 20.3-dBm Psat and 35.5% PAE in 28-nm Bulk CMOS.
Weisen ZengLi GaoNingzheng SunHui-Yang LiJin-Xu XuHongtao XuQuan XueXiuyin ZhangPublished in: IEEE J. Solid State Circuits (2024)
Keyphrases
- power consumption
- low power
- clock gating
- high power
- silicon on insulator
- high speed
- cmos technology
- nm technology
- power supply
- power reduction
- power dissipation
- power management
- ibm power processor
- low cost
- low voltage
- phase transition
- power saving
- satisfiability problem
- clock frequency
- high sensitivity
- digital signal processing
- infrared
- metal oxide semiconductor
- single chip
- high density