First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles.
Yu-Rui ChenYi-Chun LiuZefu ZhaoWan-Hsuan HsiehJia-Yang LeeChien-Te TuBo-Wei HuangJer-Fu WangShee-Jier ChuehYifan XingGuan-Hua ChenHung-Chun ChouDong Soo WooM. H. LeeC. W. LiuPublished in: VLSI Technology and Circuits (2023)