Login / Signup

Hot electrons induced degradation in lattice-matched InAlN/GaN high electron mobility transistors.

Jian RenDawei YanWenjie MouYang ZhaiGuofeng YangXiaofeng Gu
Published in: Microelectron. Reliab. (2016)
Keyphrases
  • electron beam
  • high energy
  • integrated circuit
  • electric field
  • wide range
  • mobile agents
  • power consumption
  • database
  • data sets
  • context aware
  • low power
  • boolean algebra