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A 6b 1.6GS/s ADC with redundant cycle 1-tap embedded DFE in 90nm CMOS.
Ehsan Zhian Tabasy
Ayman Shafik
S. Huang
N. Yang
Sebastian Hoyos
Samuel Palermo
Published in:
CICC (2012)
Keyphrases
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cmos technology
silicon on insulator
dynamic random access memory
analog to digital converter
power consumption
high speed
embedded systems
low cost
single chip
metal oxide semiconductor
low power
highly redundant
neural network
digital camera
circuit design
nm technology