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A Three-Stage Charge Pump with Forward Body Biasing in 28 nm UTBB FD-SOI CMOS.

Carlos A. PinheiroFabián OliveraAntonio Petraglia
Published in: LASCAS (2021)
Keyphrases
  • silicon on insulator
  • cmos technology
  • human body
  • ibm power processor
  • low cost
  • power consumption
  • analog vlsi
  • nm technology
  • dynamic random access memory