Login / Signup
Investigation on Gate Capacitances Fluctuation Due to Work-Function Variation in Metal-Gate FinFETs.
Wei-feng Lü
Mi Lin
Haipeng Zhang
Published in:
FSDM (2017)
Keyphrases
</>
field effect transistors
nano scale
long term
similarity measure
steady state
high density
real time
e learning
data structure
artificial neural networks