Login / Signup
Low-voltage metal-fuse technology featuring a 1.6V-programmable 1T1R bit cell with an integrated 1V charge pump in 22nm tri-gate process.
S. H. Kulkarni
Z. Chen
B. Srinivasan
B. Pedersen
U. Bhattacharya
K. Zhang
Published in:
VLSIC (2015)
Keyphrases
</>
cmos technology
low voltage
low power
random access memory
data processing
power consumption
nm technology
low cost
high speed
computer systems
digital camera