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SiGe HBTs with ${f_{T}/f_{\max}\, \sim\, 375/510GHz}$ Integrated in 45nm PDSOI CMOS.

John PekarikVibhor JainCrystal KenneyJudson HoltShweta KhokaleSudesh SaroopJeffrey B. JohnsonKenneth SteinViorel OntalusChristopher DurcanMona NafariTayel NesheiwatSangameshwar SaudariElahe YarmoghaddamSaloni ChaurasiaAlvin Joseph
Published in: BCICTS (2021)
Keyphrases
  • high speed
  • cmos technology
  • power consumption
  • low power
  • thin film
  • low cost
  • nm technology
  • data sets
  • power supply
  • mixed signal
  • silicon on insulator
  • dual channel
  • metal oxide semiconductor