A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology.
Chang Hua SiauKwang-Ho KimSeungpil LeeKatsuaki IsobeNoboru ShibataKapil VermaTakuya ArikiJason LiJong YuhAnirudh AmarnathQui NguyenOhwon KwonStanley JeongHeguang LiHua-Ling HsuTaiyuan TsengSteve ChoiSiddhesh DarnePradeep AnantulaAlex YapHardwell ChibvongodzeHitoshi MiwaMinoru YamashitaMitsuyuki WatanabeKoichiro HayashiYosuke KatoToru MiwaJang Yong KangMasatoshi OkumuraNaoki OokumaMuralikrishna BalagaVenky RamachandraAki MatsudaSwaroop KulkarniRaghavendra RachineniPai K. ManjunathMasahito TakeharaAnil PaiSrinivas RajendraToshiki HisadaRyo FukudaNaoya TokiwaKazuaki KawaguchiMasashi YamaokaHiromitsu KomaiTakatoshi MinamotoMasaki UnnoSusumu OzawaHiroshi NakamuraTomoo HishidaYasuyuki KajitaniLei LinPublished in: ISSCC (2019)
Keyphrases
- flash memory
- hard disk
- random access memory
- disk drives
- storage medium
- storage devices
- read write
- garbage collection
- high speed
- file system
- solid state
- main memory
- buffer management
- data storage
- random access
- b tree
- embedded systems
- buffer pool
- case study
- small size
- storage systems
- storage management
- personal computer
- database systems
- operating system