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A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme.

Mun-Kyu ChoiByung-Gil JeonNakwon JangByung-Jun MinYoon-Jong SongSung-Yung LeeHyun-Ho KimDong-Jin JungHeung-Jin JooKinam Kim
Published in: IEEE J. Solid State Circuits (2002)
Keyphrases
  • classification scheme
  • detection scheme
  • real time
  • power consumption
  • design considerations
  • high sensitivity