A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme.
Mun-Kyu ChoiByung-Gil JeonNakwon JangByung-Jun MinYoon-Jong SongSung-Yung LeeHyun-Ho KimDong-Jin JungHeung-Jin JooKinam KimPublished in: IEEE J. Solid State Circuits (2002)