Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design.
Hsien-Chin ChiuHsiang-Chun WangChao-Wei LinYi-Cheng LuoHsuan-Ling KaoFeng-Tso ChienPing-Kuo WengYan-Tang GauHao-Wei ChuangPublished in: Microelectron. Reliab. (2013)