A 1.6 V 1.4 Gbp/s/pin Consumer DRAM With Self-Dynamic Voltage Scaling Technique in 44 nm CMOS Technology.
Hyun-Woo LeeKi-Han KimYoung-Kyoung ChoiJu-Hwan SohnNak-Kyu ParkKwan-Weon KimChulwoo KimYoung-Jung ChoiByong-Tae ChungPublished in: IEEE J. Solid State Circuits (2012)