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Low storage power and high noise margin ternary memory cells in nanoelectronics.

Seied Ali HosseiniSajjad Etezadi
Published in: IET Circuits Devices Syst. (2020)
Keyphrases
  • high noise
  • low contrast
  • random access
  • storage devices
  • noise free
  • impulse noise
  • multiresolution
  • switching median filter
  • support vector
  • training set
  • domain knowledge
  • gray level
  • main memory