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Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS.

Amir AgahJefy Alex JayamonPeter M. AsbeckLawrence E. LarsonJames F. Buckwalter
Published in: IEEE J. Solid State Circuits (2014)
Keyphrases
  • silicon on insulator
  • ibm power processor
  • power consumption
  • cmos technology
  • high speed
  • clock gating
  • low power
  • low cost
  • steady state
  • error resilience
  • power management
  • chip design
  • dynamic random access memory