Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates.
Xiaoliang WangCuimei WangGuoxin HuJunxi WangJunxue RanCebao FangJianping LiYiping ZengJinmin LiXinyu LiuHe QianPublished in: Sci. China Ser. F Inf. Sci. (2005)