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Pocket Junction-Less Tunnel FET Using Below 5 nm Technology.

Suman Lata TripathiGovind Singh Patel
Published in: Wirel. Pers. Commun. (2020)
Keyphrases
  • nm technology
  • power consumption
  • low power
  • high speed
  • power dissipation
  • chip design
  • simulation model
  • low cost
  • space charge
  • gallium arsenide