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Read/write margin enhanced 10T SRAM for low voltage application.
Chunyu Peng
Lijun Guan
Wenjuan Lu
Xiulong Wu
Xincun Ji
Published in:
IEICE Electron. Express (2016)
Keyphrases
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low voltage
read write
design considerations
databases
power consumption
low power
random access memory
power line
leakage current