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Read/write margin enhanced 10T SRAM for low voltage application.

Chunyu PengLijun GuanWenjuan LuXiulong WuXincun Ji
Published in: IEICE Electron. Express (2016)
Keyphrases
  • low voltage
  • read write
  • design considerations
  • databases
  • power consumption
  • low power
  • random access memory
  • power line
  • leakage current