A 312-MHz 16-Mb random-cycle embedded DRAM macro with a power-down data retention mode for mobile applications.

Fukashi Morishita Isamu Hayashi Hideto Matsuoka Kazuhiro Takahashi Kuniyasu Shigeta Takayuki Gyohten Mitsutaka Niiro Hideyuki Noda Mako Okamoto Atsushi Hachisuka Atsushi Amo Hiroki Shinkawata Tatsuo Kasaoka Katsumi Dosaka Kazutami Arimoto Kazuyasu Fujishima Kenji Anami Tsutomu Yoshihara

Published in: IEEE J. Solid State Circuits (2005)

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